Texas Instruments NexFET N-Channel MOSFET, 60 A, 25 V, 8-Pin SON CSD16340Q3
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
25 V
Serija
NexFET
Pakuotės tipas
SON
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Ilgis
3.4mm
Typical Gate Charge @ Vgs
6.5 nC @ 4.5 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Number of Elements per Chip
1
Plotis
3.4mm
Aukštis
1.1mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
Malaysia
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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€ 1 313,38
€ 0,525 Each (On a Reel of 2500) (be PVM)
€ 1 589,19
€ 0,635 Each (On a Reel of 2500) (su PVM)
2500
€ 1 313,38
€ 0,525 Each (On a Reel of 2500) (be PVM)
€ 1 589,19
€ 0,635 Each (On a Reel of 2500) (su PVM)
2500
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
25 V
Serija
NexFET
Pakuotės tipas
SON
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Ilgis
3.4mm
Typical Gate Charge @ Vgs
6.5 nC @ 4.5 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Number of Elements per Chip
1
Plotis
3.4mm
Aukštis
1.1mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
Malaysia
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products