N-Channel MOSFET, 60 A, 25 V, 8-Pin SON Texas Instruments CSD16340Q3
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
25 V
Pakuotės tipas
SON
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.4mm
Typical Gate Charge @ Vgs
6.5 nC @ 4.5 V
Plotis
3.4mm
Transistor Material
Si
Serija
NexFET
Minimali darbinė temperatūra
-55 °C
Aukštis
1.1mm
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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€ 1,418
Each (In a Pack of 5) (be PVM)
€ 1,716
Each (In a Pack of 5) (su PVM)
5
€ 1,418
Each (In a Pack of 5) (be PVM)
€ 1,716
Each (In a Pack of 5) (su PVM)
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 45 | € 1,418 | € 7,09 |
| 50 - 95 | € 1,102 | € 5,51 |
| 100 - 245 | € 0,863 | € 4,32 |
| 250 - 495 | € 0,804 | € 4,02 |
| 500+ | € 0,756 | € 3,78 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
25 V
Pakuotės tipas
SON
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.4mm
Typical Gate Charge @ Vgs
6.5 nC @ 4.5 V
Plotis
3.4mm
Transistor Material
Si
Serija
NexFET
Minimali darbinė temperatūra
-55 °C
Aukštis
1.1mm
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products