N-Channel MOSFET, 100 A, 25 V, 8-Pin VSON-CLIP Texas Instruments CSD16321Q5

RS kodas: 162-8526Gamintojas: Texas InstrumentsGamintojo kodas: CSD16321Q5
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Serija

NexFET

Pakuotės tipas

VSON-CLIP

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

3.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Transistor Material

Si

Ilgis

6.1mm

Typical Gate Charge @ Vgs

14 nC @ 4.5 V

Plotis

5.1mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.05mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Malaysia

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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€ 0,925

Each (On a Reel of 2500) (be PVM)

€ 1,119

Each (On a Reel of 2500) (su PVM)

N-Channel MOSFET, 100 A, 25 V, 8-Pin VSON-CLIP Texas Instruments CSD16321Q5
sticker-462

€ 0,925

Each (On a Reel of 2500) (be PVM)

€ 1,119

Each (On a Reel of 2500) (su PVM)

N-Channel MOSFET, 100 A, 25 V, 8-Pin VSON-CLIP Texas Instruments CSD16321Q5
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Serija

NexFET

Pakuotės tipas

VSON-CLIP

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

3.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Transistor Material

Si

Ilgis

6.1mm

Typical Gate Charge @ Vgs

14 nC @ 4.5 V

Plotis

5.1mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.05mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Malaysia

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more