N-Channel MOSFET, 5 A, 25 V, 6-Pin WSON Texas Instruments CSD16301Q2

RS kodas: 827-4672Gamintojas: Texas InstrumentsGamintojo kodas: CSD16301Q2
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

25 V

Serija

NexFET

Pakuotės tipas

WSON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

34 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.55V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

2.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Plotis

2mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

0.8mm

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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€ 0,195

Each (In a Pack of 10) (be PVM)

€ 0,236

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 5 A, 25 V, 6-Pin WSON Texas Instruments CSD16301Q2
Pasirinkite pakuotės tipą
sticker-462

€ 0,195

Each (In a Pack of 10) (be PVM)

€ 0,236

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 5 A, 25 V, 6-Pin WSON Texas Instruments CSD16301Q2
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

25 V

Serija

NexFET

Pakuotės tipas

WSON

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

34 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.55V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

2.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Plotis

2mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

0.8mm

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more