N-Channel MOSFET, 2.9 A, 12 V, 3-Pin PICOSTAR Texas Instruments CSD13383F4T

RS kodas: 900-9955PGamintojas: Texas InstrumentsGamintojo kodas: CSD13383F4T
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

2.9 A

Maximum Drain Source Voltage

12 V

Pakuotės tipas

PICOSTAR

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Ilgis

0.64mm

Typical Gate Charge @ Vgs

2 nC @ 0 V

Maksimali darbinė temperatūra

+150 °C

Plotis

1.04mm

Transistor Material

Si

Serija

FemtoFET

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1V

Aukštis

0.35mm

Produkto aprašymas

N-Channel FemtoFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Patikrinkite dar kartą.

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€ 0,321

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,388

Už kiekviena vnt. (tiekiama riteje) (su PVM)

N-Channel MOSFET, 2.9 A, 12 V, 3-Pin PICOSTAR Texas Instruments CSD13383F4T
Pasirinkite pakuotės tipą
sticker-462

€ 0,321

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,388

Už kiekviena vnt. (tiekiama riteje) (su PVM)

N-Channel MOSFET, 2.9 A, 12 V, 3-Pin PICOSTAR Texas Instruments CSD13383F4T
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
10 - 10€ 0,321€ 3,21
20 - 40€ 0,254€ 2,54
50 - 90€ 0,209€ 2,09
100 - 240€ 0,164€ 1,64
250+€ 0,162€ 1,62

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

2.9 A

Maximum Drain Source Voltage

12 V

Pakuotės tipas

PICOSTAR

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Ilgis

0.64mm

Typical Gate Charge @ Vgs

2 nC @ 0 V

Maksimali darbinė temperatūra

+150 °C

Plotis

1.04mm

Transistor Material

Si

Serija

FemtoFET

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1V

Aukštis

0.35mm

Produkto aprašymas

N-Channel FemtoFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more