N-Channel MOSFET, 2.1 A, 12 V, 3-Pin PICOSTAR Texas Instruments CSD13381F4T
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.1 A
Maximum Drain Source Voltage
12 V
Pakuotės tipas
PICOSTAR
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
+8 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
1.04mm
Typical Gate Charge @ Vgs
1.06 nC @ 4.5 V
Plotis
0.64mm
Transistor Material
Si
Serija
FemtoFET
Minimali darbinė temperatūra
-55 °C
Aukštis
0.35mm
Produkto aprašymas
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,353
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,427
Už kiekviena vnt. (tiekiama riteje) (su PVM)
20
€ 0,353
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,427
Už kiekviena vnt. (tiekiama riteje) (su PVM)
20
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 20 - 20 | € 0,353 | € 7,06 |
| 40 - 80 | € 0,227 | € 4,54 |
| 100 - 480 | € 0,125 | € 2,50 |
| 500 - 980 | € 0,11 | € 2,20 |
| 1000+ | € 0,096 | € 1,91 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.1 A
Maximum Drain Source Voltage
12 V
Pakuotės tipas
PICOSTAR
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
+8 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
1.04mm
Typical Gate Charge @ Vgs
1.06 nC @ 4.5 V
Plotis
0.64mm
Transistor Material
Si
Serija
FemtoFET
Minimali darbinė temperatūra
-55 °C
Aukštis
0.35mm
Produkto aprašymas
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products