N-Channel MOSFET, 3.5 A, 12 V, 6-Pin DSBGA Texas Instruments CSD13306WT

RS kodas: 900-9927Gamintojas: Texas InstrumentsGamintojo kodas: CSD13306WT
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

12 V

Pakuotės tipas

DSBGA

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

15.5 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

1.9 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

1mm

Typical Gate Charge @ Vgs

8.6 nC @ 0 V

Plotis

1.49mm

Transistor Material

Si

Serija

NexFET

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1V

Aukštis

0.28mm

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€ 0,80

Each (In a Pack of 10) (be PVM)

€ 0,968

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 3.5 A, 12 V, 6-Pin DSBGA Texas Instruments CSD13306WT
sticker-462

€ 0,80

Each (In a Pack of 10) (be PVM)

€ 0,968

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 3.5 A, 12 V, 6-Pin DSBGA Texas Instruments CSD13306WT
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
10 - 10€ 0,80€ 8,00
20 - 40€ 0,516€ 5,16
50 - 90€ 0,499€ 4,99
100 - 240€ 0,40€ 4,00
250+€ 0,358€ 3,58

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

12 V

Pakuotės tipas

DSBGA

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

15.5 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

1.9 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

1mm

Typical Gate Charge @ Vgs

8.6 nC @ 0 V

Plotis

1.49mm

Transistor Material

Si

Serija

NexFET

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1V

Aukštis

0.28mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more