Dual N-Channel MOSFET, 6.5 A, 20 V, 8-Pin TSSOP Taiwan Semi TSM6968DCA RVG
Techniniai dokumentai
Specifikacijos
Markė
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
TSSOP
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.04 W
Transistor Configuration
Common Drain
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
15 nC @ 4.5 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
4.5mm
Plotis
3.1mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1.05mm
Produkto aprašymas
Dual N-Channel Power MOSFET, Taiwan Semiconductor
MOSFET Transistors, Taiwan Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,422
Each (In a Pack of 50) (be PVM)
€ 0,511
Each (In a Pack of 50) (su PVM)
50
€ 0,422
Each (In a Pack of 50) (be PVM)
€ 0,511
Each (In a Pack of 50) (su PVM)
50
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
TSSOP
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.04 W
Transistor Configuration
Common Drain
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
15 nC @ 4.5 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
4.5mm
Plotis
3.1mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1.05mm
Produkto aprašymas
Dual N-Channel Power MOSFET, Taiwan Semiconductor
MOSFET Transistors, Taiwan Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products