P-Channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2309CX RFG

RS kodas: 171-3616Gamintojas: Taiwan SemiconductorGamintojo kodas: TSM2309CX RFG
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Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.56 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

1.6mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Ilgis

2.9mm

Aukštis

0.95mm

Forward Diode Voltage

1V

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€ 0,30

Each (On a Reel of 3000) (be PVM)

€ 0,363

Each (On a Reel of 3000) (su PVM)

P-Channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2309CX RFG
sticker-462

€ 0,30

Each (On a Reel of 3000) (be PVM)

€ 0,363

Each (On a Reel of 3000) (su PVM)

P-Channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2309CX RFG
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.56 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

1.6mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Ilgis

2.9mm

Aukštis

0.95mm

Forward Diode Voltage

1V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more