N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2308CX RFG

RS kodas: 171-3697Gamintojas: Taiwan SemiconductorGamintojo kodas: TSM2308CX RFG
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

192 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Typical Gate Charge @ Vgs

3.99 nC @ 4.5 V

Plotis

1.4mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Aukštis

1.05mm

Minimali darbinė temperatūra

-55 °C

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€ 0,323

Each (In a Pack of 50) (be PVM)

€ 0,391

Each (In a Pack of 50) (su PVM)

N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2308CX RFG
Pasirinkite pakuotės tipą
sticker-462

€ 0,323

Each (In a Pack of 50) (be PVM)

€ 0,391

Each (In a Pack of 50) (su PVM)

N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2308CX RFG
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
50 - 200€ 0,323€ 16,17
250 - 450€ 0,314€ 15,70
500 - 950€ 0,306€ 15,28
1000+€ 0,299€ 14,96

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

192 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Typical Gate Charge @ Vgs

3.99 nC @ 4.5 V

Plotis

1.4mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Aukštis

1.05mm

Minimali darbinė temperatūra

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more