P-Channel MOSFET, 1.3 A, 30 V, 3-Pin SOT-23 Taiwan Semi TSM2303CX RFG

RS kodas: 171-3614Gamintojas: Taiwan SemiconductorGamintojo kodas: TSM2303CX RFG
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Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

1.7mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.1mm

Typical Gate Charge @ Vgs

10 nC @ 4.5 V

Aukštis

1.2mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

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€ 0,067

Each (On a Reel of 3000) (be PVM)

€ 0,081

Each (On a Reel of 3000) (su PVM)

P-Channel MOSFET, 1.3 A, 30 V, 3-Pin SOT-23 Taiwan Semi TSM2303CX RFG
sticker-462

€ 0,067

Each (On a Reel of 3000) (be PVM)

€ 0,081

Each (On a Reel of 3000) (su PVM)

P-Channel MOSFET, 1.3 A, 30 V, 3-Pin SOT-23 Taiwan Semi TSM2303CX RFG
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

1.7mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.1mm

Typical Gate Charge @ Vgs

10 nC @ 4.5 V

Aukštis

1.2mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more