N-Channel MOSFET, 30 mA, 600 V Depletion, 3-Pin SOT-23 Taiwan Semi TSM126CX RFG

RS kodas: 171-3612Gamintojas: Taiwan SemiconductorGamintojo kodas: TSM126CX RFG
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

30 mA

Maximum Drain Source Voltage

600 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

800 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.9mm

Typical Gate Charge @ Vgs

1.18 nC @ 5 V

Plotis

1.6mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Minimali darbinė temperatūra

-55 °C

Aukštis

1.1mm

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€ 0,213

Each (On a Reel of 3000) (be PVM)

€ 0,258

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 30 mA, 600 V Depletion, 3-Pin SOT-23 Taiwan Semi TSM126CX RFG
sticker-462

€ 0,213

Each (On a Reel of 3000) (be PVM)

€ 0,258

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 30 mA, 600 V Depletion, 3-Pin SOT-23 Taiwan Semi TSM126CX RFG
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

30 mA

Maximum Drain Source Voltage

600 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

800 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.9mm

Typical Gate Charge @ Vgs

1.18 nC @ 5 V

Plotis

1.6mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Minimali darbinė temperatūra

-55 °C

Aukštis

1.1mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more