N-Channel MOSFET, 70 A, 60 V, 3 + Tab-Pin DPAK Taiwan Semi TSM120N06LCP ROG

RS kodas: 171-3671Gamintojas: Taiwan SemiconductorGamintojo kodas: TSM120N06LCP ROG
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

TO-252

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3 + Tab

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.57mm

Typical Gate Charge @ Vgs

18 nC @ 4.5 V, 37 nC @ 10 V

Plotis

6.11mm

Number of Elements per Chip

1

Aukštis

2.29mm

Forward Diode Voltage

1V

Minimali darbinė temperatūra

-55 °C

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€ 0,657

Each (In a Pack of 25) (be PVM)

€ 0,795

Each (In a Pack of 25) (su PVM)

N-Channel MOSFET, 70 A, 60 V, 3 + Tab-Pin DPAK Taiwan Semi TSM120N06LCP ROG
sticker-462

€ 0,657

Each (In a Pack of 25) (be PVM)

€ 0,795

Each (In a Pack of 25) (su PVM)

N-Channel MOSFET, 70 A, 60 V, 3 + Tab-Pin DPAK Taiwan Semi TSM120N06LCP ROG
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
25 - 25€ 0,657€ 16,43
50 - 75€ 0,569€ 14,23
100 - 475€ 0,499€ 12,47
500+€ 0,438€ 10,95

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

TO-252

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3 + Tab

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.57mm

Typical Gate Charge @ Vgs

18 nC @ 4.5 V, 37 nC @ 10 V

Plotis

6.11mm

Number of Elements per Chip

1

Aukštis

2.29mm

Forward Diode Voltage

1V

Minimali darbinė temperatūra

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more