N-Channel MOSFET, 55 A, 30 V, 3-Pin DPAK Taiwan Semi TSM090N03CP ROG

RS kodas: 171-3659Gamintojas: Taiwan SemiconductorGamintojo kodas: TSM090N03CP ROG
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

5.8mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.5mm

Typical Gate Charge @ Vgs

7.5 nC @ 4.5 V

Aukštis

2.3mm

Forward Diode Voltage

1V

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€ 0,366

Each (In a Pack of 25) (be PVM)

€ 0,443

Each (In a Pack of 25) (su PVM)

N-Channel MOSFET, 55 A, 30 V, 3-Pin DPAK Taiwan Semi TSM090N03CP ROG
Pasirinkite pakuotės tipą
sticker-462

€ 0,366

Each (In a Pack of 25) (be PVM)

€ 0,443

Each (In a Pack of 25) (su PVM)

N-Channel MOSFET, 55 A, 30 V, 3-Pin DPAK Taiwan Semi TSM090N03CP ROG
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
25 - 50€ 0,366€ 9,16
75 - 125€ 0,317€ 7,93
150 - 475€ 0,277€ 6,93
500+€ 0,251€ 6,27

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

5.8mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.5mm

Typical Gate Charge @ Vgs

7.5 nC @ 4.5 V

Aukštis

2.3mm

Forward Diode Voltage

1V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more