Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
650 V
Serija
MDmesh M5
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Plotis
5.15mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
15.75mm
Typical Gate Charge @ Vgs
185 nC @ 10 V
Aukštis
20.15mm
Produkto aprašymas
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 458,85
€ 15,295 Each (In a Tube of 30) (be PVM)
€ 555,21
€ 18,507 Each (In a Tube of 30) (su PVM)
30

€ 458,85
€ 15,295 Each (In a Tube of 30) (be PVM)
€ 555,21
€ 18,507 Each (In a Tube of 30) (su PVM)
30

Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
650 V
Serija
MDmesh M5
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Plotis
5.15mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
15.75mm
Typical Gate Charge @ Vgs
185 nC @ 10 V
Aukštis
20.15mm
Produkto aprašymas
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.