N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-247 STMicroelectronics STW35N60DM2
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
600 V
Serija
MDmesh DM2
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
15.75mm
Typical Gate Charge @ Vgs
54 nC @ 10 V
Plotis
5.15mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.6V
Aukštis
20.15mm
Produkto aprašymas
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
MOSFET Transistors, STMicroelectronics
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Patikrinkite dar kartą.
€ 13,11
€ 6,555 Each (In a Pack of 2) (be PVM)
€ 15,86
€ 7,932 Each (In a Pack of 2) (su PVM)
Standartas
2
€ 13,11
€ 6,555 Each (In a Pack of 2) (be PVM)
€ 15,86
€ 7,932 Each (In a Pack of 2) (su PVM)
Standartas
2
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 2 - 8 | € 6,555 | € 13,11 |
| 10 - 18 | € 6,175 | € 12,35 |
| 20 - 48 | € 5,605 | € 11,21 |
| 50 - 98 | € 5,035 | € 10,07 |
| 100+ | € 4,75 | € 9,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
600 V
Serija
MDmesh DM2
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
15.75mm
Typical Gate Charge @ Vgs
54 nC @ 10 V
Plotis
5.15mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.6V
Aukštis
20.15mm
Produkto aprašymas
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products