N-Channel MOSFET, 6 A, 20 V, 8-Pin SOIC STMicroelectronics STS6NF20V

RS kodas: 178-5118Gamintojas: STMicroelectronicsGamintojo kodas: STS6NF20V
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

0.045 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.6V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

5mm

Typical Gate Charge @ Vgs

8.5 nC @ 4.5 V

Plotis

4mm

Number of Elements per Chip

1

Aukštis

1.25mm

Serija

STripFET

Minimali darbinė temperatūra

-55 °C

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€ 0,366

Each (On a Reel of 2500) (be PVM)

€ 0,443

Each (On a Reel of 2500) (su PVM)

N-Channel MOSFET, 6 A, 20 V, 8-Pin SOIC STMicroelectronics STS6NF20V
sticker-462

€ 0,366

Each (On a Reel of 2500) (be PVM)

€ 0,443

Each (On a Reel of 2500) (su PVM)

N-Channel MOSFET, 6 A, 20 V, 8-Pin SOIC STMicroelectronics STS6NF20V
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

0.045 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.6V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

5mm

Typical Gate Charge @ Vgs

8.5 nC @ 4.5 V

Plotis

4mm

Number of Elements per Chip

1

Aukštis

1.25mm

Serija

STripFET

Minimali darbinė temperatūra

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more