STMicroelectronics P-Channel MOSFET, 2 A, 30 V, 3-Pin SOT-23 STR2P3LLH6
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
30 V
Serija
STripFET
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
1.75mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
3.04mm
Typical Gate Charge @ Vgs
6 nC @ 4.5 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1.3mm
Forward Diode Voltage
1.1V
Kilmės šalis
China
Produkto aprašymas
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 102,36
€ 0,409 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 123,86
€ 0,495 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
250
€ 102,36
€ 0,409 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 123,86
€ 0,495 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
250
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 250 - 450 | € 0,409 | € 20,47 |
| 500+ | € 0,369 | € 18,43 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
30 V
Serija
STripFET
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
1.75mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
3.04mm
Typical Gate Charge @ Vgs
6 nC @ 4.5 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1.3mm
Forward Diode Voltage
1.1V
Kilmės šalis
China
Produkto aprašymas
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products