N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 STMicroelectronics STR2N2VH5

RS kodas: 791-7876Gamintojas: STMicroelectronicsGamintojo kodas: STR2N2VH5
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

2.3 A

Maximum Drain Source Voltage

20 V

Serija

STripFET V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.7V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.04mm

Typical Gate Charge @ Vgs

6 nC @ 4.5 V

Plotis

1.75mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

1.3mm

Produkto aprašymas

N-Channel STripFET™ V, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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€ 0,159

Each (In a Pack of 10) (be PVM)

€ 0,192

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 STMicroelectronics STR2N2VH5
Pasirinkite pakuotės tipą
sticker-462

€ 0,159

Each (In a Pack of 10) (be PVM)

€ 0,192

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 STMicroelectronics STR2N2VH5
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

2.3 A

Maximum Drain Source Voltage

20 V

Serija

STripFET V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.7V

Maximum Power Dissipation

350 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.04mm

Typical Gate Charge @ Vgs

6 nC @ 4.5 V

Plotis

1.75mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

1.3mm

Produkto aprašymas

N-Channel STripFET™ V, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more