STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 7.2 A, 500 V, 3-Pin TO-220 STP9NK50Z
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
500 V
Pakuotės tipas
TO-220
Serija
MDmesh, SuperMESH
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Ilgis
10.4mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Plotis
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Aukštis
9.15mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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€ 76,00
€ 1,52 Each (In a Tube of 50) (be PVM)
€ 91,96
€ 1,839 Each (In a Tube of 50) (su PVM)
50
€ 76,00
€ 1,52 Each (In a Tube of 50) (be PVM)
€ 91,96
€ 1,839 Each (In a Tube of 50) (su PVM)
50
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 50 - 50 | € 1,52 | € 76,00 |
| 100 - 450 | € 1,188 | € 59,38 |
| 500 - 950 | € 0,998 | € 49,88 |
| 1000 - 4950 | € 0,828 | € 41,42 |
| 5000+ | € 0,785 | € 39,24 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
500 V
Pakuotės tipas
TO-220
Serija
MDmesh, SuperMESH
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Ilgis
10.4mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Plotis
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Aukštis
9.15mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products