Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Series
STripFET II
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
35 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Transistor Material
Si
Height
9.15mm
Minimum Operating Temperature
-65 °C
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 55.00
€ 1.10 Each (In a Tube of 50) (Exc. Vat)
€ 66.55
€ 1.331 Each (In a Tube of 50) (inc. VAT)
50

€ 55.00
€ 1.10 Each (In a Tube of 50) (Exc. Vat)
€ 66.55
€ 1.331 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50

| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | € 1.10 | € 55.00 |
| 100 - 450 | € 0.886 | € 44.30 |
| 500 - 950 | € 0.743 | € 37.15 |
| 1000 - 4950 | € 0.669 | € 33.45 |
| 5000+ | € 0.549 | € 27.45 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Series
STripFET II
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
35 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Transistor Material
Si
Height
9.15mm
Minimum Operating Temperature
-65 °C
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


