N-Channel MOSFET Transistor, 25 A, 3-Pin TO-220 STMicroelectronics STP26N65DM2

RS kodas: 192-4662Gamintojas: STMicroelectronicsGamintojo kodas: STP26N65DM2
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

25 A

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

190 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Typical Gate Charge @ Vgs

35.5 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.4mm

Plotis

4.6mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.6V

Aukštis

15.75mm

Kilmės šalis

China

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€ 3,412

Each (In a Tube of 50) (be PVM)

€ 4,129

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET Transistor, 25 A, 3-Pin TO-220 STMicroelectronics STP26N65DM2
sticker-462

€ 3,412

Each (In a Tube of 50) (be PVM)

€ 4,129

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET Transistor, 25 A, 3-Pin TO-220 STMicroelectronics STP26N65DM2
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Vamzdelis
50 - 50€ 3,412€ 170,62
100 - 200€ 2,94€ 147,00
250 - 450€ 2,782€ 139,12
500 - 950€ 2,52€ 126,00
1000+€ 2,31€ 115,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

25 A

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

190 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Typical Gate Charge @ Vgs

35.5 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.4mm

Plotis

4.6mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.6V

Aukštis

15.75mm

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more