Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
650 V
Series
MDmesh M2
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
330 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Transistor Material
Si
Width
4.6mm
Forward Diode Voltage
1.6V
Height
15.75mm
Country of Origin
China
Product details
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 11.75
€ 2.35 Each (In a Pack of 5) (Exc. Vat)
€ 14.22
€ 2.844 Each (In a Pack of 5) (inc. VAT)
Standard
5

€ 11.75
€ 2.35 Each (In a Pack of 5) (Exc. Vat)
€ 14.22
€ 2.844 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5

| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | € 2.35 | € 11.75 |
| 25 - 45 | € 2.25 | € 11.25 |
| 50 - 120 | € 2.05 | € 10.25 |
| 125 - 245 | € 1.80 | € 9.00 |
| 250+ | € 1.75 | € 8.75 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
650 V
Series
MDmesh M2
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
330 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Transistor Material
Si
Width
4.6mm
Forward Diode Voltage
1.6V
Height
15.75mm
Country of Origin
China
Product details
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).


