STMicroelectronics MDmesh K5, SuperMESH5 N-Channel MOSFET, 12 A, 950 V, 3-Pin TO-220 STP15N95K5
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
950 V
Serija
MDmesh K5, SuperMESH5
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
4.6mm
Ilgis
10.4mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Number of Elements per Chip
1
Aukštis
15.75mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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€ 197,12
€ 3,942 Each (In a Tube of 50) (be PVM)
€ 238,52
€ 4,77 Each (In a Tube of 50) (su PVM)
50
€ 197,12
€ 3,942 Each (In a Tube of 50) (be PVM)
€ 238,52
€ 4,77 Each (In a Tube of 50) (su PVM)
50
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 50 - 50 | € 3,942 | € 197,12 |
| 100 - 200 | € 3,182 | € 159,12 |
| 250+ | € 2,85 | € 142,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
950 V
Serija
MDmesh K5, SuperMESH5
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
4.6mm
Ilgis
10.4mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Number of Elements per Chip
1
Aukštis
15.75mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products