Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Serija
STripFET F7
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
10.4mm
Typical Gate Charge @ Vgs
13.6 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Plotis
4.6mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
9.15mm
Produkto aprašymas
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
€ 6,18
€ 1,235 Each (In a Pack of 5) (be PVM)
€ 7,48
€ 1,494 Each (In a Pack of 5) (su PVM)
Standartas
5

€ 6,18
€ 1,235 Each (In a Pack of 5) (be PVM)
€ 7,48
€ 1,494 Each (In a Pack of 5) (su PVM)
Standartas
5

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Patikrinkite dar kartą.
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Serija
STripFET F7
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
10.4mm
Typical Gate Charge @ Vgs
13.6 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Plotis
4.6mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
9.15mm
Produkto aprašymas
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.