Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
50 nC @ 10 V
Width
4.6mm
Maximum Operating Temperature
+150 °C
Height
9.3mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 95.00
€ 1.90 Each (In a Tube of 50) (Exc. Vat)
€ 114.95
€ 2.299 Each (In a Tube of 50) (inc. VAT)
50

€ 95.00
€ 1.90 Each (In a Tube of 50) (Exc. Vat)
€ 114.95
€ 2.299 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50

| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | € 1.90 | € 95.00 |
| 100 - 450 | € 1.45 | € 72.50 |
| 500 - 950 | € 1.25 | € 62.50 |
| 1000 - 4950 | € 1.05 | € 52.50 |
| 5000+ | € 0.979 | € 48.95 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
50 nC @ 10 V
Width
4.6mm
Maximum Operating Temperature
+150 °C
Height
9.3mm
Minimum Operating Temperature
-55 °C
Product details


