N-Channel MOSFET, 4 A, 60 V, 3-Pin SOT-223 STMicroelectronics STN3NF06L

RS kodas: 920-8786Gamintojas: STMicroelectronicsGamintojo kodas: STN3NF06L
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

60 V

Serija

STripFET

Pakuotės tipas

SOT-223

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.5mm

Typical Gate Charge @ Vgs

7 nC @ 5 V

Plotis

3.5mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

1.8mm

Produkto aprašymas

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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€ 0,218

Each (On a Reel of 4000) (be PVM)

€ 0,264

Each (On a Reel of 4000) (su PVM)

N-Channel MOSFET, 4 A, 60 V, 3-Pin SOT-223 STMicroelectronics STN3NF06L
sticker-462

€ 0,218

Each (On a Reel of 4000) (be PVM)

€ 0,264

Each (On a Reel of 4000) (su PVM)

N-Channel MOSFET, 4 A, 60 V, 3-Pin SOT-223 STMicroelectronics STN3NF06L
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

60 V

Serija

STripFET

Pakuotės tipas

SOT-223

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.5mm

Typical Gate Charge @ Vgs

7 nC @ 5 V

Plotis

3.5mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

1.8mm

Produkto aprašymas

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more