N-Channel MOSFET, 90 A, 60 V, 8-Pin PowerFLAT 5 x 6 STMicroelectronics STL90N6F7
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
60 V
Serija
STripFET F7
Pakuotės tipas
PowerFLAT 5 x 6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
5.4mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Plotis
6.35mm
Forward Diode Voltage
1.2V
Aukštis
0.95mm
Kilmės šalis
China
Produkto aprašymas
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
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€ 13,30
€ 1,33 Each (In a Pack of 10) (be PVM)
€ 16,09
€ 1,609 Each (In a Pack of 10) (su PVM)
Standartas
10
€ 13,30
€ 1,33 Each (In a Pack of 10) (be PVM)
€ 16,09
€ 1,609 Each (In a Pack of 10) (su PVM)
Standartas
10
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 40 | € 1,33 | € 13,30 |
| 50 - 90 | € 1,282 | € 12,82 |
| 100 - 240 | € 1,14 | € 11,40 |
| 250 - 490 | € 1,045 | € 10,45 |
| 500+ | € 0,95 | € 9,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
60 V
Serija
STripFET F7
Pakuotės tipas
PowerFLAT 5 x 6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
5.4mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Plotis
6.35mm
Forward Diode Voltage
1.2V
Aukštis
0.95mm
Kilmės šalis
China
Produkto aprašymas
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products