P-Channel MOSFET, 42 A, 60 V, 8-Pin PowerFLAT 5 x 6 STMicroelectronics STL42P6LLF6

RS kodas: 178-7402Gamintojas: STMicroelectronicsGamintojo kodas: STL42P6LLF6
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Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

42 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

PowerFLAT 5 x 6

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

34 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

5.4mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

6.35mm

Typical Gate Charge @ Vgs

30 nC @ 4.5 V

Aukštis

0.95mm

Serija

STripFET

Forward Diode Voltage

1.1V

Produkto aprašymas

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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€ 1,014

Each (On a Reel of 3000) (be PVM)

€ 1,227

Each (On a Reel of 3000) (su PVM)

P-Channel MOSFET, 42 A, 60 V, 8-Pin PowerFLAT 5 x 6 STMicroelectronics STL42P6LLF6
sticker-462

€ 1,014

Each (On a Reel of 3000) (be PVM)

€ 1,227

Each (On a Reel of 3000) (su PVM)

P-Channel MOSFET, 42 A, 60 V, 8-Pin PowerFLAT 5 x 6 STMicroelectronics STL42P6LLF6
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

42 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

PowerFLAT 5 x 6

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

34 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

5.4mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

6.35mm

Typical Gate Charge @ Vgs

30 nC @ 4.5 V

Aukštis

0.95mm

Serija

STripFET

Forward Diode Voltage

1.1V

Produkto aprašymas

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more