Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
PowerFLAT
Serija
STripFET F7
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
111 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Ilgis
5.4mm
Typical Gate Charge @ Vgs
29 nC @ 10 V
Plotis
6.2mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Aukštis
0.95mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,247
Each (On a Reel of 3000) (be PVM)
€ 0,299
Each (On a Reel of 3000) (su PVM)
3000
€ 0,247
Each (On a Reel of 3000) (be PVM)
€ 0,299
Each (On a Reel of 3000) (su PVM)
3000
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
PowerFLAT
Serija
STripFET F7
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
111 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Ilgis
5.4mm
Typical Gate Charge @ Vgs
29 nC @ 10 V
Plotis
6.2mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Aukštis
0.95mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.