N-Channel MOSFET, 200 A, 40 V, 6 + Tab-Pin H2PAK STMicroelectronics STH410N4F7-6AG
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
200 A
Maximum Drain Source Voltage
40 V
Serija
STripFET F7
Pakuotės tipas
H2PAK
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6 + Tab
Maximum Drain Source Resistance
1.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
365 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
8.9mm
Typical Gate Charge @ Vgs
141 nC @ 10 V
Plotis
10.4mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.3V
Aukštis
4.8mm
Produkto aprašymas
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
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€ 4,28
€ 2,138 Each (In a Pack of 2) (be PVM)
€ 5,18
€ 2,587 Each (In a Pack of 2) (su PVM)
Standartas
2
€ 4,28
€ 2,138 Each (In a Pack of 2) (be PVM)
€ 5,18
€ 2,587 Each (In a Pack of 2) (su PVM)
Standartas
2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
200 A
Maximum Drain Source Voltage
40 V
Serija
STripFET F7
Pakuotės tipas
H2PAK
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6 + Tab
Maximum Drain Source Resistance
1.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
365 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
8.9mm
Typical Gate Charge @ Vgs
141 nC @ 10 V
Plotis
10.4mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.3V
Aukštis
4.8mm
Produkto aprašymas
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products