STMicroelectronics MDmesh N-Channel MOSFET, 2.5 A, 1500 V, 3-Pin H2PAK-2 STH3N150-2

RS kodas: 792-5861Gamintojas: STMicroelectronicsGamintojo kodas: STH3N150-2
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

1500 V

Serija

MDmesh

Pakuotės tipas

H2PAK-2

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

15.8mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.4mm

Typical Gate Charge @ Vgs

29.3 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

4.8mm

Produkto aprašymas

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Sandėlio informacija laikinai nepasiekiama.

€ 8,30

€ 4,15 Each (In a Pack of 2) (be PVM)

€ 10,04

€ 5,022 Each (In a Pack of 2) (su PVM)

STMicroelectronics MDmesh N-Channel MOSFET, 2.5 A, 1500 V, 3-Pin H2PAK-2 STH3N150-2
Pasirinkite pakuotės tipą
sticker-462

€ 8,30

€ 4,15 Each (In a Pack of 2) (be PVM)

€ 10,04

€ 5,022 Each (In a Pack of 2) (su PVM)

STMicroelectronics MDmesh N-Channel MOSFET, 2.5 A, 1500 V, 3-Pin H2PAK-2 STH3N150-2
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

1500 V

Serija

MDmesh

Pakuotės tipas

H2PAK-2

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

15.8mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.4mm

Typical Gate Charge @ Vgs

29.3 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

4.8mm

Produkto aprašymas

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more