Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
10.4 x 4.6 x 9.15mm
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 1,208
Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 1,462
Už kiekviena vnt. (tiekiama tuboje) (su PVM)
5
€ 1,208
Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 1,462
Už kiekviena vnt. (tiekiama tuboje) (su PVM)
5
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Vamzdelis |
---|---|---|
5 - 20 | € 1,208 | € 6,04 |
25 - 45 | € 0,957 | € 4,78 |
50 - 95 | € 0,846 | € 4,23 |
100 - 245 | € 0,732 | € 3,66 |
250+ | € 0,702 | € 3,51 |
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
10.4 x 4.6 x 9.15mm
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.