STMicroelectronics STGD18N40LZT4 IGBT, 30 A 420 V, 3-Pin DPAK (TO-252), Surface Mount
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
420 V
Maximum Gate Emitter Voltage
16V
Maximum Power Dissipation
125 W
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
3
Switching Speed
1MHz
Transistor Configuration
Single
Matmenys
6.6 x 6.2 x 2.4mm
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 2,205
Už kiekviena vnt. (tiekiama juostoje) (be PVM)
€ 2,668
Už kiekviena vnt. (tiekiama juostoje) (su PVM)
5
€ 2,205
Už kiekviena vnt. (tiekiama juostoje) (be PVM)
€ 2,668
Už kiekviena vnt. (tiekiama juostoje) (su PVM)
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Juosta |
|---|---|---|
| 5 - 20 | € 2,205 | € 11,02 |
| 25 - 45 | € 2,048 | € 10,24 |
| 50 - 120 | € 1,89 | € 9,45 |
| 125 - 245 | € 1,68 | € 8,40 |
| 250+ | € 1,575 | € 7,88 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
420 V
Maximum Gate Emitter Voltage
16V
Maximum Power Dissipation
125 W
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
3
Switching Speed
1MHz
Transistor Configuration
Single
Matmenys
6.6 x 6.2 x 2.4mm
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products