N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220FP STMicroelectronics STF20NF20

RS kodas: 178-1487Gamintojas: STMicroelectronicsGamintojo kodas: STF20NF20
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Pakuotės tipas

TO-220FP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

0.125 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Ilgis

10.4mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Plotis

4.6mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Aukštis

16.4mm

Serija

STripFET

Minimali darbinė temperatūra

-55 °C

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€ 1,732

Each (In a Tube of 50) (be PVM)

€ 2,096

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220FP STMicroelectronics STF20NF20
sticker-462

€ 1,732

Each (In a Tube of 50) (be PVM)

€ 2,096

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220FP STMicroelectronics STF20NF20
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Vamzdelis
50 - 50€ 1,732€ 86,62
100 - 450€ 1,312€ 65,62
500 - 950€ 1,102€ 55,12
1000+€ 0,894€ 44,68

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Pakuotės tipas

TO-220FP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

0.125 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Ilgis

10.4mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Plotis

4.6mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Aukštis

16.4mm

Serija

STripFET

Minimali darbinė temperatūra

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more