STMicroelectronics MDmesh N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP STF10NM60N

RS Stock No.: 168-7566Brand: STMicroelectronicsManufacturers Part No.: STF10NM60N
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

600 V

Series

MDmesh

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

16.4mm

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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€ 90.00

€ 1.80 Each (In a Tube of 50) (Exc. Vat)

€ 108.90

€ 2.178 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP STF10NM60N
sticker-462

€ 90.00

€ 1.80 Each (In a Tube of 50) (Exc. Vat)

€ 108.90

€ 2.178 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP STF10NM60N

Stock information temporarily unavailable.

sticker-462

Stock information temporarily unavailable.

QuantityUnit pricePer Tube
50 - 50€ 1.80€ 90.00
100 - 200€ 1.40€ 70.00
250+€ 1.25€ 62.50

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

600 V

Series

MDmesh

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

16.4mm

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more