N-Channel MOSFET, 60 A, 55 V, 3-Pin DPAK STMicroelectronics STD60NF55LT4

RS kodas: 760-9588Gamintojas: STMicroelectronicsGamintojo kodas: STD60NF55LT4
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

55 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Typical Gate Charge @ Vgs

40 nC @ 5 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

6.6mm

Plotis

6.2mm

Transistor Material

Si

Serija

STripFET II

Aukštis

2.4mm

Minimali darbinė temperatūra

-55 °C

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€ 2,048

Each (In a Pack of 5) (be PVM)

€ 2,478

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 60 A, 55 V, 3-Pin DPAK STMicroelectronics STD60NF55LT4
sticker-462

€ 2,048

Each (In a Pack of 5) (be PVM)

€ 2,478

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 60 A, 55 V, 3-Pin DPAK STMicroelectronics STD60NF55LT4
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 20€ 2,048€ 10,24
25 - 45€ 1,628€ 8,14
50+€ 1,575€ 7,88

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

55 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Typical Gate Charge @ Vgs

40 nC @ 5 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

6.6mm

Plotis

6.2mm

Transistor Material

Si

Serija

STripFET II

Aukštis

2.4mm

Minimali darbinė temperatūra

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more