Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
13A
Maximum Drain Source Voltage Vds
550V
Package Type
TO-252
Series
MDmesh M5
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
240mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
31nC
Maximum Power Dissipation Pd
90W
Maximum Gate Source Voltage Vgs
25 V
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
6.2 mm
Length
6.6mm
Height
2.4mm
Automotive Standard
No
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 3.25
€ 3.25 Each (Exc. Vat)
€ 3.93
€ 3.93 Each (inc. VAT)
Standard
1

€ 3.25
€ 3.25 Each (Exc. Vat)
€ 3.93
€ 3.93 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1

Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
13A
Maximum Drain Source Voltage Vds
550V
Package Type
TO-252
Series
MDmesh M5
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
240mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
31nC
Maximum Power Dissipation Pd
90W
Maximum Gate Source Voltage Vgs
25 V
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
6.2 mm
Length
6.6mm
Height
2.4mm
Automotive Standard
No
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.


