N-Channel MOSFET, 80 A, 30 V, 3-Pin DPAK STMicroelectronics STD150N3LLH6

RS kodas: 760-9540Gamintojas: STMicroelectronicsGamintojo kodas: STD150N3LLH6
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

4.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

40 nC @ 4.5 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

6.6mm

Plotis

6.2mm

Serija

DeepGate, STripFET

Aukštis

2.4mm

Produkto aprašymas

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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€ 0,406

Each (In a Pack of 5) (be PVM)

€ 0,491

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 80 A, 30 V, 3-Pin DPAK STMicroelectronics STD150N3LLH6
Pasirinkite pakuotės tipą
sticker-462

€ 0,406

Each (In a Pack of 5) (be PVM)

€ 0,491

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 80 A, 30 V, 3-Pin DPAK STMicroelectronics STD150N3LLH6
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

4.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

40 nC @ 4.5 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

6.6mm

Plotis

6.2mm

Serija

DeepGate, STripFET

Aukštis

2.4mm

Produkto aprašymas

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more