Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
4.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
40 nC @ 4.5 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
6.6mm
Plotis
6.2mm
Serija
DeepGate, STripFET
Aukštis
2.4mm
Produkto aprašymas
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,406
Each (In a Pack of 5) (be PVM)
€ 0,491
Each (In a Pack of 5) (su PVM)
Standartas
5
€ 0,406
Each (In a Pack of 5) (be PVM)
€ 0,491
Each (In a Pack of 5) (su PVM)
Standartas
5
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
4.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
40 nC @ 4.5 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
6.6mm
Plotis
6.2mm
Serija
DeepGate, STripFET
Aukštis
2.4mm
Produkto aprašymas
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.