N-Channel MOSFET Transistor, 53 A, 3-Pin D2PAK STMicroelectronics STB45N30M5

RS kodas: 192-4651Gamintojas: STMicroelectronicsGamintojo kodas: STB45N30M5
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

53 A

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Plotis

9.35mm

Number of Elements per Chip

1

Ilgis

10.4mm

Typical Gate Charge @ Vgs

95 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

4.37mm

Forward Diode Voltage

1.5V

Kilmės šalis

China

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€ 4,725

Each (On a Reel of 1000) (be PVM)

€ 5,717

Each (On a Reel of 1000) (su PVM)

N-Channel MOSFET Transistor, 53 A, 3-Pin D2PAK STMicroelectronics STB45N30M5
sticker-462

€ 4,725

Each (On a Reel of 1000) (be PVM)

€ 5,717

Each (On a Reel of 1000) (su PVM)

N-Channel MOSFET Transistor, 53 A, 3-Pin D2PAK STMicroelectronics STB45N30M5
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

53 A

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Plotis

9.35mm

Number of Elements per Chip

1

Ilgis

10.4mm

Typical Gate Charge @ Vgs

95 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

4.37mm

Forward Diode Voltage

1.5V

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more