N-Channel MOSFET Transistor, 15 A, 3-Pin D2PAK STMicroelectronics STB22N60M6

RS kodas: 192-4650Gamintojas: STMicroelectronicsGamintojo kodas: STB22N60M6
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

15 A

Pakuotės tipas

D2PAK

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.4mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Plotis

9.35mm

Number of Elements per Chip

1

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.6V

Aukštis

4.37mm

Kilmės šalis

China

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€ 1,47

Each (On a Reel of 1000) (be PVM)

€ 1,779

Each (On a Reel of 1000) (su PVM)

N-Channel MOSFET Transistor, 15 A, 3-Pin D2PAK STMicroelectronics STB22N60M6
sticker-462

€ 1,47

Each (On a Reel of 1000) (be PVM)

€ 1,779

Each (On a Reel of 1000) (su PVM)

N-Channel MOSFET Transistor, 15 A, 3-Pin D2PAK STMicroelectronics STB22N60M6
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
1000 - 1000€ 1,47€ 1 470,00
2000 - 4000€ 1,365€ 1 365,00
5000+€ 1,312€ 1 312,50

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

15 A

Pakuotės tipas

D2PAK

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.4mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Plotis

9.35mm

Number of Elements per Chip

1

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.6V

Aukštis

4.37mm

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more