N-Channel MOSFET Transistor, 13 A, 3-Pin D2PAK STMicroelectronics STB18N60M6

RS kodas: 192-4936Gamintojas: STMicroelectronicsGamintojo kodas: STB18N60M6
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

13 A

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Ilgis

10.4mm

Typical Gate Charge @ Vgs

16.8 nC @ 10 V

Plotis

9.35mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Aukštis

4.37mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.6V

Kilmės šalis

China

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€ 2,782

Each (In a Pack of 5) (be PVM)

€ 3,366

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET Transistor, 13 A, 3-Pin D2PAK STMicroelectronics STB18N60M6
Pasirinkite pakuotės tipą
sticker-462

€ 2,782

Each (In a Pack of 5) (be PVM)

€ 3,366

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET Transistor, 13 A, 3-Pin D2PAK STMicroelectronics STB18N60M6
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 20€ 2,782€ 13,91
25 - 45€ 2,625€ 13,12
50 - 120€ 2,362€ 11,81
125 - 245€ 2,152€ 10,76
250+€ 2,048€ 10,24

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

13 A

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Ilgis

10.4mm

Typical Gate Charge @ Vgs

16.8 nC @ 10 V

Plotis

9.35mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Aukštis

4.37mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.6V

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more