SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 STMicroelectronics SCTW90N65G2V
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
119 A
Maximum Drain Source Voltage
650 V
Pakuotės tipas
Hip247
Serija
SCTW90
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
0.024 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Transistor Material
SiC
Number of Elements per Chip
1
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€ 37,59
už 1 vnt. (be PVM)
€ 45,48
už 1 vnt. (su PVM)
1
€ 37,59
už 1 vnt. (be PVM)
€ 45,48
už 1 vnt. (su PVM)
1
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina |
|---|---|
| 1 - 4 | € 37,59 |
| 5 - 9 | € 35,28 |
| 10 - 24 | € 33,39 |
| 25 - 49 | € 31,60 |
| 50+ | € 30,03 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
119 A
Maximum Drain Source Voltage
650 V
Pakuotės tipas
Hip247
Serija
SCTW90
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
0.024 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Transistor Material
SiC
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products