SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCT50N120
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
1200 V
Serija
SCT
Pakuotės tipas
Hip247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
0.59 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3V
Number of Elements per Chip
1
Transistor Material
SiC
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€ 997,50
€ 33,25 Each (In a Tube of 30) (be PVM)
€ 1 206,98
€ 40,232 Each (In a Tube of 30) (su PVM)
30
€ 997,50
€ 33,25 Each (In a Tube of 30) (be PVM)
€ 1 206,98
€ 40,232 Each (In a Tube of 30) (su PVM)
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
1200 V
Serija
SCT
Pakuotės tipas
Hip247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
0.59 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3V
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products