Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
45A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
100mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
270W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
105nC
Forward Voltage Vf
3.5V
Maximum Operating Temperature
200°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics
Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 25.00
€ 25.00 Each (Exc. Vat)
€ 30.25
€ 30.25 Each (inc. VAT)
Standard
1

€ 25.00
€ 25.00 Each (Exc. Vat)
€ 30.25
€ 30.25 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1

Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
45A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
100mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
270W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
105nC
Forward Voltage Vf
3.5V
Maximum Operating Temperature
200°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics
Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.


