STMicroelectronics SiC MOSFET SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H

RS Stock No.: 201-4415Brand: STMicroelectronicsManufacturers Part No.: SCT20N120H
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

1200 V

Series

SiC MOSFET

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.203 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

239V

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

€ 11,800.00

€ 11.80 Each (On a Reel of 1000) (Exc. Vat)

€ 14,278.00

€ 14.278 Each (On a Reel of 1000) (inc. VAT)

STMicroelectronics SiC MOSFET SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H

1000

Available in multiples of 1000
1000€ 11,800.00
2000€ 23,600.00
3000€ 35,400.00
4000€ 47,200.00
5000€ 59,000.00
6000€ 70,800.00
7000€ 82,600.00
8000€ 94,400.00
9000€ 106,200.00
10000€ 118,000.00
11000€ 129,800.00
12000€ 141,600.00
13000€ 153,400.00
14000€ 165,200.00
15000€ 177,000.00

sticker-462

€ 11,800.00

€ 11.80 Each (On a Reel of 1000) (Exc. Vat)

€ 14,278.00

€ 14.278 Each (On a Reel of 1000) (inc. VAT)

STMicroelectronics SiC MOSFET SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H

Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000€ 11,800.00
2000€ 23,600.00
3000€ 35,400.00
4000€ 47,200.00
5000€ 59,000.00
6000€ 70,800.00
7000€ 82,600.00
8000€ 94,400.00
9000€ 106,200.00
10000€ 118,000.00
11000€ 129,800.00
12000€ 141,600.00
13000€ 153,400.00
14000€ 165,200.00
15000€ 177,000.00

sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

1200 V

Series

SiC MOSFET

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.203 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

239V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more