Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Maximum Power Dissipation
6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-0.5 V, +15 V
Width
2.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.6mm
Maximum Operating Temperature
+150 °C
Height
0.44mm
Typical Power Gain
17 dB
Product details
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 28.50
€ 5.70 Each (In a Pack of 5) (Exc. Vat)
€ 34.48
€ 6.897 Each (In a Pack of 5) (inc. VAT)
Standard
5

€ 28.50
€ 5.70 Each (In a Pack of 5) (Exc. Vat)
€ 34.48
€ 6.897 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5

| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 5 | € 5.70 | € 28.50 |
| 10 - 95 | € 4.80 | € 24.00 |
| 100 - 495 | € 3.85 | € 19.25 |
| 500 - 995 | € 3.40 | € 17.00 |
| 1000+ | € 2.90 | € 14.50 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Maximum Power Dissipation
6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-0.5 V, +15 V
Width
2.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.6mm
Maximum Operating Temperature
+150 °C
Height
0.44mm
Typical Power Gain
17 dB
Product details
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.


