Techniniai dokumentai
Specifikacijos
Markė
SemikronMaximum Continuous Collector Current
81 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Pakuotės tipas
SEMITRANS2
Configuration
Dual Half Bridge
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
7
Transistor Configuration
Series
Matmenys
94 x 34 x 30.1mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+175 °C
Produkto aprašymas
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Patikrinkite dar kartą.
€ 91,68
už 1 vnt. (be PVM)
€ 110,93
už 1 vnt. (su PVM)
1
€ 91,68
už 1 vnt. (be PVM)
€ 110,93
už 1 vnt. (su PVM)
1
Pirkti dideliais kiekiais
kiekis | Vieneto kaina |
---|---|
1 - 1 | € 91,68 |
2 - 4 | € 87,40 |
5 - 9 | € 80,75 |
10 - 19 | € 76,95 |
20+ | € 73,15 |
Techniniai dokumentai
Specifikacijos
Markė
SemikronMaximum Continuous Collector Current
81 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Pakuotės tipas
SEMITRANS2
Configuration
Dual Half Bridge
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
7
Transistor Configuration
Series
Matmenys
94 x 34 x 30.1mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+175 °C
Produkto aprašymas
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.