Techniniai dokumentai
Specifikacijos
Markė
SemikronMaximum Continuous Collector Current
618 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Pakuotės tipas
SEMITRANS3
Configuration
Single
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
5
Transistor Configuration
Single
Matmenys
106.4 x 61.4 x 30.5mm
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-40 °C
Produkto aprašymas
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 274,05
už 1 vnt. (be PVM)
€ 331,60
už 1 vnt. (su PVM)
1
€ 274,05
už 1 vnt. (be PVM)
€ 331,60
už 1 vnt. (su PVM)
1
Pirkti dideliais kiekiais
kiekis | Vieneto kaina |
---|---|
1 - 9 | € 274,05 |
10 - 19 | € 260,40 |
20 - 49 | € 246,75 |
50 - 249 | € 235,20 |
250+ | € 223,65 |
Techniniai dokumentai
Specifikacijos
Markė
SemikronMaximum Continuous Collector Current
618 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Pakuotės tipas
SEMITRANS3
Configuration
Single
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
5
Transistor Configuration
Single
Matmenys
106.4 x 61.4 x 30.5mm
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-40 °C
Produkto aprašymas
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.