Semikron SK45GD063, SEMITOP3 , N-Channel Hex IGBT Transistor Module, 45 A max, 600 V, Through Hole
Techniniai dokumentai
Specifikacijos
Markė
SemikronMaximum Continuous Collector Current
45 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
20V
Number of Transistors
6
Pakuotės tipas
SEMITOP3
Configuration
Hex
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
36
Transistor Configuration
Six Pack
Matmenys
55 x 31 x 12mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+150 °C
Kilmės šalis
Italy
Produkto aprašymas
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 77,70
už 1 vnt. (be PVM)
€ 94,02
už 1 vnt. (su PVM)
1
€ 77,70
už 1 vnt. (be PVM)
€ 94,02
už 1 vnt. (su PVM)
1
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina |
|---|---|
| 1 - 1 | € 77,70 |
| 2 - 4 | € 70,35 |
| 5 - 9 | € 64,58 |
| 10+ | € 57,75 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
SemikronMaximum Continuous Collector Current
45 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
20V
Number of Transistors
6
Pakuotės tipas
SEMITOP3
Configuration
Hex
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
36
Transistor Configuration
Six Pack
Matmenys
55 x 31 x 12mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+150 °C
Kilmės šalis
Italy
Produkto aprašymas
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products